Size-Dependent Metal-insulator Transition in Pt-Dispersed Sio2 Thin Film: A Candidate for Future Non-Volatile Memory
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Voltage-induced insulator-metal transition at room temperature in an anodic porous alumina thin film
Bistable switching effect, induced by an electric field, in an anodic porous alumina thin film is reported. An electrode was bonded on the surface of a thin film with Ag paste, and I-V characteristic between the electrode and the aluminium substrate was measured The I-V characteristic reveals a reversible resistance change, initiating at +4 V and terminating at –1.5 V at room temperature. Huge ...
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